Persistent currents in mesoscopic Fibonacci rings

In the framework of a tight-binding model, we study energy spectra and persistent currents in mesoscopic Fibonacci rings threaded by a magnetic flux. It is found that the flux-dependent electron eigenenergies E(Φ) in mesoscopic Fibonacci rings still form "bands" with respect to the flux Φ, but there is a scaling relation between the total "bandwidth" and the Fibonacci number. When the strength of the one-dimensional quasiperiodic potential increases, the persistent current decreases rapidly. Interestingly, for a generalized mixing model of mesoscopic Fibonacci rings, free-electron-like persistent current may appear if the number of electrons of the system takes a specific value.published_or_final_versio

Quantum waveguide theory of serial stub structures

The electronic behaviors in quantum wires with serial stubs are studied. A general theory of quantum waveguide based on transfer matrix method is developed and is used to treat periodic stub structures, serial stub structures with a defect stub, and Fibonacci stub structures. A number of interesting physical properties in connection with electronic transmission, energy spectra, and charge density distributions in these structures, are found theoretically. In particular, we find that whether there are periodicity and symmetry in the transmission and energy spectra depends on the commensurability of the length parameters. If one length ratio is incommensurate, then the transmission and energy spectra do not exhibit periodicity and symmetry even for periodic stub structures. In particular, the quasiperiodic behaviors are shown in Fibonacci stub structures proposed by us whenever the length parameters are commensurate. The experimental relevance is also addressed briefly. © 1999 American Institute of Physics.published_or_final_versio

Coupled optical interface modes in a Fibonacci dielectric superlattice

The coupled optical interface modes in a Fibonacci dielectric superlattice are studied. In the dielectric continuum approximation, the dispersion relation is found to have two bands of dual triadic Cantor structures, each being nonuniform scaling. For most of the eigenfrequencies, the amplitude profiles of electrostatic potential in this quasiperiodic structure are critical. Moreover, an invariant is analytically derived and is used to describe the general features of the frequency spectra and potential profiles.published_or_final_versio

Sample entropy analysis of EEG signals via artificial neural networks to model patients' consciousness level based on anesthesiologists experience.

Electroencephalogram (EEG) signals, as it can express the human brain's activities and reflect awareness, have been widely used in many research and medical equipment to build a noninvasive monitoring index to the depth of anesthesia (DOA). Bispectral (BIS) index monitor is one of the famous and important indicators for anesthesiologists primarily using EEG signals when assessing the DOA. In this study, an attempt is made to build a new indicator using EEG signals to provide a more valuable reference to the DOA for clinical researchers. The EEG signals are collected from patients under anesthetic surgery which are filtered using multivariate empirical mode decomposition (MEMD) method and analyzed using sample entropy (SampEn) analysis. The calculated signals from SampEn are utilized to train an artificial neural network (ANN) model through using expert assessment of consciousness level (EACL) which is assessed by experienced anesthesiologists as the target to train, validate, and test the ANN. The results that are achieved using the proposed system are compared to BIS index. The proposed system results show that it is not only having similar characteristic to BIS index but also more close to experienced anesthesiologists which illustrates the consciousness level and reflects the DOA successfully.This research is supported by the Center forDynamical Biomarkers and Translational Medicine, National Central University, Taiwan, which is sponsored by Ministry of Science and Technology (Grant no. MOST103-2911-I-008-001). Also, it is supported by National Chung-Shan Institute of Science & Technology in Taiwan (Grant nos. CSIST-095-V301 and CSIST-095-V302)

Genome wide association mapping of grain arsenic, copper, molybdenum and zinc in rice (Oryza sativa L.) grown at four international field sites

Peer reviewedPublisher PD

Hepatitis B Virus Core Promoter Double Mutations (A1762T, G1764A) Are Associated with Lower Levels of Serum Dihydrolipoyl Dehydrogenase

Published by S. Karger AG, BaselObjectives: The aim of this study was to identify serum proteins with differential concentrations between hepatocellular carcinoma (HCC) patients and HBsAg asymptomatic carriers among individuals infected with hepatitis B virus (HBV) with basal core promoter (BCP) double mutations (A1762T, G1764A). Methods: iTRAQ and liquid chromatography-tandem mass spectrometry were used to identify differentially expressed protein, and an ELISA test was used for the validation test. Results: The total number of proteins identified was 1,125, of which 239 showed statistically significant differences in their expression. The relative concentrations of serum dihydrolipoyl dehydrogenase (DLD), which showed the most significant correlation with liver diseases and infection, were significantly lower in HCC patients than asymptomatic HBsAg carriers and individuals negative for HBsAg. However, only the difference between HCC patients with BCP double mutations and HBsAg-negative individuals could be confirmed by ELISA. Meanwhile, we found that the concentrations of serum DLD in those infected with HBV with BCP double mutations were significantly lower than in individuals with the wild-type BCP. However, the difference in the concentrations of serum DLD between individuals with wild-type BCP and those negative for HBsAg was not significant. Conclusions: HBV with BCP double mutations are associated with lower concentrations of serum DLD

InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate

Building optoelectronic devices on a Si platform has been the engine behind the development of Si photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and size relative to hybrid solutions. Although significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III–V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III–V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-Gaussian emission spectrum of 114 nm centered at 1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature. This work complements our previous demonstration of an InAs/GaAs QD laser directly grown on a Si platform and paves the way for future monolithic integration of III–V light sources required for Si photonics

Staircase Quantum Dots Configuration in Nanowires for Optimized Thermoelectric Power

The performance of thermoelectric energy harvesters can be improved by nanostructures that exploit inelastic transport processes. One prototype is the three-terminal hopping thermoelectric device where electron hopping between quantum-dots are driven by hot phonons. Such three-terminal hopping thermoelectric devices have potential in achieving high efficiency or power via inelastic transport and without relying on heavy-elements or toxic compounds. We show in this work how output power of the device can be optimized via tuning the number and energy configuration of the quantum-dots embedded in parallel nanowires. We find that the staircase energy configuration with constant energy-step can improve the power factor over a serial connection of a single pair of quantum-dots. Moreover, for a fixed energy-step, there is an optimal length for the nanowire. Similarly for a fixed number of quantum-dots there is an optimal energy-step for the output power. Our results are important for future developments of high-performance nanostructured thermoelectric devices

Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates

High-performance, multispectral, and large-format infrared focal plane arrays are the long-demanded third-generation infrared technique for hyperspectral imaging, infrared spectroscopy, and target identification. A promising solution is to monolithically integrate infrared photodetectors on a silicon platform, which offers not only low-cost but high-resolution focal plane arrays by taking advantage of the well-established Si-based readout integrated circuits. Here, we report the first InAs/GaAs quantum dot (QD) infrared photodetectors monolithically integrated on silicon substrates by molecular beam epitaxy. The III–V photodetectors are directly grown on silicon substrates by using a GaAs buffer, which reduces the threading dislocation density to ∼106 cm–2. The high-quality QDs grown on Si substrates have led to long photocarrier relaxation time and low dark current density. Mid-infrared photodetection up to ∼8 μm is also achieved at 80 K. This work demonstrates that III–V photodetectors can directly be integrated with silicon readout circuitry for realizing large-format focal plane arrays as well as mid-infrared photonics in silicon

1.7eV Al0.2Ga0.8As solar cells epitaxially grown on silicon by SSMBE using a superlattice and dislocation filters

Lattice-mismatched 1.7eV Al0.2Ga0.8As photovoltaic solar cells have been monolithically grown on Si substrates using Solid Source Molecular Beam Epitaxy (SSMBE). As a consequence of the 4%-lattice-mismatch, threading dislocations (TDs) nucleate at the interface between the Si substrate and III-V epilayers and propagate to the active regions of the cell. There they act as recombination centers and degrade the performances of the cell. In our case, direct AlAs/GaAs superlattice growth coupled with InAlAs/AlAs strained layer superlattice (SLS) dislocation filter layers (DFLSs) have been used to reduce the TD density from 1×10^9cm^-2 to 1(±0.2)×10^7cm^-2. Lattice-matched Al0.2Ga0.8As cells have also been grown on GaAs as a reference. The best cell grown on silicon exhibits a Voc of 964mV, compared with a Voc of 1128mV on GaAs. Fill factors of respectively 77.6% and 80.2% have been calculated. Due to the lack of an anti-reflection coating and the non-optimized architecture of the devices, relatively low Jsc have been measured: 7.30mA.cm^-2 on Si and 6.74mA.cm^-2 on GaAs. The difference in short-circuit currents is believed to be caused by a difference of thickness between the samples due to discrepancies in the calibration of the MBE prior to each growth. The bandgap-voltage offset of the cells, defined as Eg/q-Voc, is relatively high on both substrates with 736mV measured on Si versus 572mV on GaAs. The non-negligible TD density partly explains this result on Si. On GaAs, non-ideal growth conditions are possibly responsible for these suboptimal performances